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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-126 package *Complement to type 2N6037/6038/6039 *DARLINGTON *High DC current gain APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6034 2N6035 2N6036 Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6034 VCBO Collector-base voltage 2N6035 2N6036 2N6034 VCEO Collector-emitter voltage 2N6035 2N6036 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -4 -8 -0.1 40 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6034 VCEO(SUS) Collector-emitter sustaining voltage 2N6035 2N6036 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance IC=-2A; IB=-8mA IC=-4A; IB=-40mA IC=-4A; IB=-40mA IC=-2A ; VCE=-3V IC=-0.1A ;IB=0 2N6034 2N6035 2N6036 SYMBOL CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -2.0 -3.0 -4.0 -2.8 -0.1 -0.1 -0.5 -0.1 -2.0 500 750 100 200 15000 V V V V mA mA mA mA VCE=Rated VCEO; IB=0 VCE=Rated VCEO; VBE(off)=1.5V TC=125 VCB=Rated VCBO; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-3V IC=-2A ; VCE=-3V IC=-4A ; VCE=-3V IE=0;VCB=-10V;f=0.1MHz pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6034 2N6035 2N6036 Fig.2 outline dimensions 3 |
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